报告摘要： Antiferromagnetic (AFM) spintronics is an emerging field of research, which uses the antiferromagnets as the active spin-dependent elements for the next generation of spintronic applications. This talk will address three approaches predicted by density-functional theory calculations, involving new material platforms, which are promising for AFM spintronics. The first approach exploits the magnetoelectric effect at the interface between the non-collinear AFM antiperovskite ANMn3 (A = Ga, Ni, Zn, etc.) and a ferroelectric perovskite oxide. The ferroelectric modulation of the antiferromagnetic exchange coupling generates the canting of the interfacial moments, leading to the sizable net magnetization that can be reversed by the ferroelectric switching. The second approach involves Néel vector switching in non-collinear AFM antiperovskites by strain or spin-transfer torque, which changes the magnetic space groups and results in the sign and magnitude changes of the anomalous Hall conductivity. The third approach comprises the subfield of AFM spintronics known as topological AFM spintronics, where the Néel vector is used to electrically manipulate the symmetry related topological states. We demonstrate that room temperature AFM metal MnPd2 allows the electrical control of the Dirac nodal line by the Néel spin-orbit torque, leading to the sizable change of the spin-Hall conductivity. These approaches support the efficient manipulation and detection of the AFM order, which broaden the scope of material platforms that can be exploited in AFM spintronics.