王占国科研成就科研综述据2020年6月中国科学院半导体所官网显示，王占国长期从事半导体材料和材料物理研究

从1980年起，主要从事半导体深能级物理和光谱物理研究，提出了识别两个深能级共存系统两者是否是同—缺陷不同能态的新方法，解决了国际上对GaAs中A、B能级和硅中金受主及金施主能级本质的长期争论

提出混晶半导体中深能级展宽和光谱谱线分裂的物理模型，解释了它们的物理起因

提出了GaAs电学补偿五能级模型和电学补偿新判据

协助林兰英先生，首次在太空从熔体中生长了GaAs单品并对其光电性质作了系统研究

近年来，领导的实验组又在应变自组装In(Ga)As/GaAs，In(Ga)As/InAlAs/InP等量子点（线）与量子点（线）超晶格材料和量子级联激光器和探测器材料生长和大功率量子点激光器、量子级联激光器和探测器以及太赫兹激光器研制方面获得突破

最近，又提出了柔性衬底的概念，开拓了大失配材料体系研制的新方向

 科技成果奖励获奖项目获奖年份获奖级别自组织生长量子点激光材料和器件研究2001国家自然科学二等奖-1990国家科技进步三等奖-2000中国科学院自然科学一等奖-1989中国科学院科技进步一等奖-1995、1997中国科学院科技进步二等奖-1990中国科学院科技进步三等奖--国家重点科技攻关奖参考资料：  承担项目来源名称备注时限国家重点基础研究发展规划项目信息功能材料相关基础问题首席科学家2000年10月-2005年9月国家重点基础研究发展规划项目应变自组织量子点、量子线材料的可控生长和器件应用负责人2006年9月-2011年9月国家自然科学基金重大研究计划重点课题半导体量子点中间带光伏电池基础研究学术骨干2014年9月-2018年9月国家自然科学基金重大项目子课题有机/无机复合半导体复合光伏器件结构设计、制备与性质研究负责人2010年1月-2013年12月参考资料： 学术论著据2020年6月中国科学院半导体所官网显示，王占国先后与合作者一起在国际学术刊物发表论文200余篇

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