报告题目：铁电忆阻器阻变机制的研究

报告人：钟妮 副研究员 华东师范大学，物理与电子科学学院

报告时间：2020年10月14日星期三 19:00-21:00

报告地点：线上报告，会议 ID：230 238 674

https://meeting.tencent.com/s/sp84MhCIHWmx

报告邀请人：游陆

报告摘要：Ferroelectric control of transport behavior enables the application to the development for next-generation nonvolatile memory due to excellent reliability, retention and endurance as well as fast switching speed. However underlying mechanisms of diverse transport behaviors are still in debate, because charge trapping/detrapping and polarization reversal occurs simultaneously, which is hard to be well distinguished. This study reported the direct observation of multi electroresistance switching (RS) behaviors in ferroelectric thin films. We selected two typical ferroelectric compounds：BiFeO3 and Pb(Zr0.52Ti0.48)O3 with different Curie temperatures (Tc). The temperature dependence of surface potential in ferroelectric films has been carefully investigated by scanning kelvin probe microscopy (SKPM) measurement. It has been clearly found that a thermal treatment after poling leads to the extensive relaxation of trapped charge induced by the local poling process, and resulting in a polarization charge dominant surface potential, which enables to distinguish polarization charge and injected charge. More interestingly, opposite RS behaviors have been firstly clearly observed in the initial and thermal treated samples. It could be well explained by the different effect of trapped charge or polarization charge on transport characterization. Our current research extends our knowledge of intuitively distinguish RS behavior originate from tapping/detrapping and ferroelectric polarization, provide an effective approach to classify the origin of RS characterization in ferroelectric memristors by combining local piezoelectric AFM, SKPM and conductive AFM measurement.

报告人简介：钟妮，华东师范大学，物理与电子科学学院，副研究员。2003年硕士毕业于中国科学院上海硅酸盐研究所。2007年毕业于日本奈良科学技术大学院大学获理学博士学位。2008-2012年任日本产业技术综合研究所CREST特别研究员。她的研究方向为功能薄膜的多场调控及其在新型存储器件中的应用研究。目前已经在Adv. Funct. Mater., Adv. Electron. Mater., Nanoscale, Appl. Phys. Lett.，IEEE Electr. Device L.等国际学术刊物上发表论文近五十篇，（被Nat. Comm.、Adv. Mater.、Rep. Prog. Phys.、Nano Lett.、Mater. Today等引用600余次）。曾获日本文部科学省博士研究生奖学金以及2006 年国家优秀自费留学生奖学金，2013年入选上海市“浦江人才”计划。

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