褚君浩科研成就科研综述褚君浩长期从事红外光电子材料和器件的研究，开展了用于红外探测器的窄禁带半导体碲镉汞（HgCdTe）和铁电薄膜的材料物理和器件研究

提出了HgCdTe的禁带宽度等关系式，被国际上称为CXT公式，广泛引用并认为与实验结果最符合建立了研究窄禁带半导体MIS器件结构二维电子气子能带结构的理论模型发现HgCdTe的基本光电跃迁特性，确定了材料器件的光电判别依据开展铁电薄膜材料物理和非制冷红外探测器研究，研制成功PZT和BST铁电薄膜非制冷红外探测器并实现了热成像

 褚君浩主要研究固体物理、窄禁带半导体物理

系统研究了窄禁带半导体的基础物理，在光学性质、电学性质、能带结构、晶格振动、杂质缺陷、二维电子气研究方面取得系统的研究成果，HgCdTe基础物理部分研究成果具有国际领先水平

提出的禁带宽度公式被国际上称为CXT公式（褚、徐、汤）

 学术论著截至2015年12月，褚君浩发表论文200余篇，研究结果被中国国内外广泛引用并被写进美国、英国、荷兰、前苏联等出版的科学手册和专著中，被Landolt-Bornstein科技数据集特邀为“含Hg化合物部分”修订负责人

褚君浩. 窄禁带半导体物理学[M]. 科学出版社, 2005.Chu J H , Sher A . Physics and Properties of Narrow Gap Semiconductors, Springer, New York, 2008.R B lachnik, J Chu, R R Galazka, J Geurts, J Gutowski, B Honerlage, D E Hofmann, J Kossut, R Levy, P Michler, U Neukirch, D Strauch, T Story, A Waag, Landol t-Boernstein: Numrical Data and Functional Relationships in Science and Technology III/41B Semiconductors: II-VI and I-VII Compounds; Semimagnetic Compounds, Edited By U Rossler, Springer, 1999J Chu,T Dietl, W Dobrowolski, J Gutowski, B K Meyer, K Sebald, T Story, T Voss, Landolt-Boernstein: Numrical Data and Functional Relationships in Science and Technology III/44B: New Data and Updates and Updates for II-VI Compounds, Springer, 2008:347Junhao Chu,Pulin Liu,Yong Chang Editors,Proceedings of Fourth International Conference on Thin Film Physics and Applications,SPIE Vol4086,World Scientific, 2000Junhao Chu,Zongsheng Lai,Lianwei Wang,Shaohui Xu Editors,Proceedings of Fifth International Conference on Thin Film Physics and Applications,SPIE Vol5774,World Scientific,2004Junhao Chu, Shiqiu Xu, and Dingyuau Tang, Energy Gap Versus Alloy Composition and Temperature in HgCdTe. Appl Phys Lett, 1983, 43(11):1064.Chu Junhao, Xu shiqiu,Tang Dingyuan, The Energy Band Gap of Ternary Semiconductor HgCdTe, Kexe Tongbao,1983,8(6):851Junhao Chu,Dingrong Qian,and Dingyuan Tang,Burstein Moss Effect in HgCdTe Physics Scripta,VolT14,1986,37Junhao Chu,R Sizmann, R Wollrab, F Koch,J Ziegle, H Maier, The Study of Capacitance Spectroscopy of Resonant Defect States in HgCdTe, J Infrared & Millim Waves, 1989, 8(5):395.Chu Junhao, Mi Zhengyu, Study on Two Dimensional Electron Gas for P-HgCdTe MIS Heterostructures, J Infrared, Millim Waves, 1989, 8(6):54-63.Junhao Chu,RSizmann,FKoch,Dispersion Relation and Landau Levels of Inversion Layer Subband on P-HgCdTe,Science in China,1990,A 33(10):1192Junhao Chu, Zhengyu Mi, Subband Structure Models of N-inversion Layer in Narrow Gap Semiconductors, J Infrared & Millim Waves, 1990, 9(3):209.Junhao Chu,SCShen,RSizmann,FKoch,JZiegler,HMaier,Subband Electron Cyclotron Resonance and Spin Resonance P-HgCdTe MIS Heterostructures,Surface Science,1991,241:204～210.Junhao Chu, Xuechu Shen, R Sizmann, F Koch, Magneto Optical Resonance of Subband Electron for HgCdTe, J Infrared Millim Waves, 1991, 10(1):50Junhao Chu, Zhengyu Mi and Dingyuag Tang, Intrinsic Absorption and Related Quantities in HgCdTe, Infrared Physics,1991,32:195J H Chu, Z Y Mi, R Sizman, and F Koch, Subband Structure in the Electric Cuantum Limit in HgCdTe, Phys Rev, 1991, B44:1717.Junhao Chu, Zhengyu Mi and Dingyuan Tang, Band to Band Optical Absorption in Narrow-gapHgCdTe Semiconductors, J Appl Phys, 1992, 71(8):3955Junhao Chu, Z Y Mi, R Sizmann, F Koch, R Wollrab, J Ziegler, H Maier, Influence of Resonant Defect States on Subband Structure in HgCdTe J Vac Sci Tech,1992, B10(4):1569.Junhao Chu and S C Shen, The Study of Far-infrared Phonon Spectra on HgCdTe Semicond, Sci& Tech, 1993, 8:S86-S89.Junhao Chu, B Li, K Liu, and D Y Tang, Empirical Rule of Intrinsic Absorption-spectroscopy in HgCdTe, J Appl Phys, 1994,1234.Junhao Chu, Dingyuan Tang, Recent Progress on HgCdTe at the National Laboratory for Infrared Physics in China, J Electronic Materials,1996, 25(8):1176Junhao Chu,Yongsheng Gui,Biao Li ,Dingyuan Tang,Determination of Cut-off Wavelength and Composition Distribution in Hg1- xCdxTe, J Electron Mater, 1998, 27(6):718. 科研获奖1987年，获国家自然科学奖四等奖

1992年，获中国科学院自然科学一等奖

1993年，获国家自然科学奖三等奖

1995年，获中国科学院自然科学二等奖

1999年，获中国科学院自然科学二等奖

2005年，“碲镉汞薄膜的光电跃迁及红外焦平面材料器件研究”获国家自然科学奖二等奖

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